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5A Low Leakage High Efficiency Diode , 50 - 1000V High Speed Diode 50~75ns

Basic Information
Place of Origin: Jiangxi, China
Brand Name: CANYI
Certification: RoHS
Model Number: HER501~HER508
Minimum Order Quantity: Negotiable
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Detail Information
Type: 5A High Efficiency Diode Package Type: Through Hole
Package: DO - 201AD Weight: 1.16 Gram
Voltage: 50-1000V Material: Molded Plastic
High Light:

high power diode

,

low forward voltage diode


Product Description

5A low leakage diode 50 - 1000V high speed diode 50~75ns high efficiency diode

 

High current diode features:5A Low Leakage High Efficiency Diode , 50 - 1000V High Speed Diode 50~75ns 0

  • High current capability
  • High surge current capability
  • High reliability
  • Low reverse current
  • Low forward voltage drop
  • Fast switching for high efficiency
  • Pb / RoHS Free

 

High efficiency rectifier mechanical Data:

 

  • Case : DO-201AD Molded plastic
  • Epoxy : UL94V-O rate flame retardant
  • Lead : Axial lead solderable per MIL-STD-202,
  • Method 208 guaranteed
  • Polarity : Color band denotes cathode end
  • Mounting position : Any
  • Weight : 1.16 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
 
Parameter Symbol

HER

501

HER

502

HER

503

HER

504

HER

505

HER

506

HER

507

HER

508

Unit
Maximum repetitive peak reverse voltage VRRM 50 100 200 300 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 210 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 300 400 600 800 1000 V
Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 50 °C IF(AV) 1.0 A

Peak forward surge current 8.3 ms Single half sine wave Superimposed

on rated load (JEDEC Method)

IFSM 30 A
Maximum Forward Voltage at I F = 1.0 A. VF 1.1 1.7 V
Maximum DC Reverse Current Ta = 25 °C at rated DC Blocking Voltage Ta = 100 °C IR 5.0 μA
IR(H) 50 μA
Typical Junction Capacitance (1) CJ 15 pF

Maximum Reverse Recovery Time ( Note 1 )

 

Trr 50 75 ns
Junction Temperature Range TJ -65~+125
Storage Temperature Range Tstg -65~+150

 

 

Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
 

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5A Low Leakage High Efficiency Diode , 50 - 1000V High Speed Diode 50~75ns 1

Contact Details
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Phone Number : 86-13423609933

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