AO3400 SOT-23 Mosfet Power Transistor NPN MOSFET A09T N Channel Transistor

Basic Information
Place of Origin: Guangdong, China
Brand Name: CANYI
Certification: RoHS
Model Number: AO3400
Minimum Order Quantity: 1000PCS
Price: Negotiated
Packaging Details: Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Delivery Time: 3-5 days
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Detail Information
Type: N Channel MOSFET Transistor Package Type: Surface Mount
Package: SOT-23 VDS: 30V
Tstg: -55~ +150℃ Sample: Free
Port: Shenzhen
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Product Description

AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor


  • Model Number:AO3400
  • Type:MOSFET
  • Package Type:Surface Mount
  • Product Name:AO3400
  • Other name:AO3400A
  • Marking:A09T
  • FET Type:N-Channel
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) 25°C5.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
  • Vgs(th) (Max) Id:1.45V 250uA
  • Gate Charge (Qg) (Max) Vgs: 7nC 4.5V
  • Vgs (Max): ±12V


The AO3400 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
AO3400 SOT-23 Mosfet Power Transistor NPN MOSFET A09T N Channel Transistor 0

AO3400 SOT-23 Mosfet Power Transistor NPN MOSFET A09T N Channel Transistor 1

Maximum Ratings and Thermal Characteristics (TA = 25unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12
Continuous Drain Current ID 5.8 A

Pulsed Drain Current

IDM 30
Power Dissipation PD 350 mW
Junction Temperature TJ 150
Storage Temperature TSTG -55~+150

Electrical Characteristics (TA=25°C, unless otherwise noted)

Parameter Symbol Test Condition Min. Typ. Max. Unit
Off Characteristics
Drain-Source Breakdown Voltage V(BR) DSS VGS = 0V, ID = -250uA 30     V
Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = -0V     1 uA
Gate Body Leakage IGSS VGS=±12v,VDS= 0V     ±100 nA
On characteristics
Drain-Source On-State Resistance(NOTE 3) RDS(on) VGS = 10V, ID = 5.8A     35 mΩ
VGS = 4.5V, ID = 5A     40
VGS = 2.5V, ID =4A     52
Forward Transconductance 1) gfs VDS= 5V,ID= 5A 8     S
Gate Threshold Voltage VGS(th) VDS = VGS ,ID = 250uA 0.7   1.4 v
Switching Characteristics (note 4,5)
Turn-On Delay Time td(on)

VDD = 10V, VDS=15V
RL=2.7Ω,RGEN = 3Ω

    5 ns
Turn-On Rise Time tr     7
Turn-Off Delay Time td(off)     40
Turn-Off Fall Time tf     6
Dynamic Characteristics (note 4,5)
Input Capacitance Ciss

VDS = 15V, VGS = 0V
f = 1 MHz

    1095 pF
Output Capacitance Coss   99  
Reverse Transfer Capacitance Crss   77  
Drain-source diode characteristics and maximum ratings
Diode Forward Voltage(NOTE 3) VSD       1



Note :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Contact Details

Phone Number : 86-13423609933

WhatsApp : +8613423609933