|Place of Origin:||Jiangxi, China|
|Minimum Order Quantity:||1000PCS|
|Delivery Time:||1 - 2 Weeks|
|Payment Terms:||Telegraphic Transfer in Advance (Advance TT, T/T)|
|Supply Ability:||15,000,000PCS Per Day|
|Type:||N-Channel||Package Type:||Surface Mount|
mosfet power transistor,
p channel transistor
MXN3312 Field Effect Transistor Dual N - Channel Enhancement Mode Power Mosfet
The MXN3312 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
High density cell design fo ultra low Rdson
Fully characterized Avalanche voltage and current
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Bulk packaging data
0.54*45 Diodes Bulk Box: 63*21*191MM Outer Box: 42*33*24CM
0.58 Diodes Bulk Box: 84*22*195MM Outer Box: 42*33*24CM
0.54*45 Diodes Tape cassette: 255*145*75MM Outer box: 42*27.6*31CM
45 long bulk packaging: 42*33*24CM
58 long bulk packaging: 45*21*26CM
Q: When can I get the price?
A: We will reply you ASAP. We will quote for you within 12 hours after we get your inquiry.
Q: How many kinds of products in your factory ?
A: We have a large range of products, such as Schottky Signal Diode, Schottky Barrier Diode, High Current Rectifier Diode, Fast Recovery Diode, Fast Switching Diode, Surface Mount Zener Diode and etc. Looking forward to your email.
Q:Can you customize it DIY?
A: We can help you design exclusive products according to your requirements. We have the entire service flow from product R&D design, manufacturing process to finished product packaging, welcome to sample custom.
Q: How long can I expect to get the sample?
A: It will be ready for delivery in 1 - 2 weeks, depends on the feature of your sample. The samples will be sent to you by express.