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FQPF2N60C FQPF2N60 2N60 N Channel Transistor MOSFET 2A 600V TO-220F Original Package

Basic Information
Place of Origin: Guangdong, China
Brand Name: Canyi
Certification: RoHS
Model Number: FQPF2N60C
Minimum Order Quantity: 1000PCS
Price: US$ 0.1-0.19 per unit (Pieces)
Packaging Details: Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Delivery Time: 3-5 days
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 1000,000,000PCS Per Day
Detail Information
Name: 2N60 MOSFET Transistor Package Type: Throught Hole
Material: Silicon Type: Field-Effect Transistor
Package: TO-220F VDSS: 600V
Storage Temperature: -55 - +150(℃) ID: 1.6A
High Light:

mosfet power transistor

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high power transistor


Product Description

FQPF2N60C FQPF2N60 2N60 MOSFET 2A 600V field effect transistor TO-220F MOS FET N-Channel transistor Original Package
 

Features:
  • 1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V
  • Low gate charge ( typical 9.0 nC)
  • Low Crss ( typical 5.0 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capabilit
General Description:
These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
 

Absolute Maximum Ratings (Tc=25°C)
 

SymbolParameters
FQPF2N60
Unit
VDSS

Drain-Source Voltage

600V
VGS

Gate-Source Voltage-Continuous

±30V
ID

Drain Current-Continuous(Note 2)

1.6A
IDM

Drain Current-Single Plused(Note 1)

6.4A
PD

Power Dissipation (Note 2)

28W
Tj

Max.Operating junction temperature

-55~150

 
Electrical characteristics (Tc=25°C unless otherwise noted)
 

SymbolParametersMinTypMaxUnitsConditions
Static Characteristics
BVDSS

Drain-Source Breakdown
VoltageCurrent (Note 1)

600----VID=250µA,VGS=0V,TJ=25°C
VGS(th)

Gate Threshold Voltage

3.0--5.0VVDS=VGS,ID=250μA
RDS(on)

Drain-Source On-Resistance

--2025VGS=10V,ID=25A
IGSS

Gate-Body Leakage Current

----±100nAVGS=±20V,VDS=0
IDSS

Zero Gate Voltage Drain Current

----1μAVDS=60V,VGS=0
gfs

Forward Transconductance

--2.0--SVDS=30V,ID=25A
Switching Characteristics
Td(on)

Turn-On Delay Time

--1030ns

VDS=30V,ID=25A,
RG=50Ω(Note 2)

Tr

Rise Time

--185--ns
Td(off)

Turn-Off Delay Time

--2050ns
Tf

Fall Time

--2560ns
Qg

Total Gate Charge

--39--nC

VDS=48V,VGS=10V,
ID=50A(Note 2)
 

Qgs

Gate-Source Charge

--911nC
Qgd

Gate-Drain Charge

--

4.3

--nC
Dynamic Characteristics
Ciss

Input Capacitance

--270350pF

VDS=25V,VGS=0,
f=1MHz
 

Coss

Output Capacitance

--4050pF
Crss

Reverse Transfer Capacitance

--57pF
IS

Continuous Drain-Source Diode
Forward Current(Note 2)

----1.6A 
VSD

Diode Forward On-Voltage

----1.4VIS=20A,VGS=0

 
Our Company
 

Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.
 
Our Advantage:
1. Electronic component specialist and professional.
2. Strong R & D team, experienced research staffs
3. Strong and consistent quality control, same standard as of RoHS.
4. Elite sales team with more than 5 years international trading experience individually.
5. Strong technical support to help customers choose the most appropriate products.
6. Be proud of the product and the competitive price.
 
FQPF2N60C FQPF2N60 2N60 N Channel Transistor MOSFET 2A 600V TO-220F Original Package 0

Contact Details
Sales Manager

WhatsApp : +8613750005407