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High Input Impedance N Channel Transistor , Field Emission Transistor 600V

Basic Information
Place of Origin: Jiangxi, China
Brand Name: JC
Certification: RoHS
Model Number: OSPF2N60
Minimum Order Quantity: Negotiable
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Detail Information
Name: N Channel Transistor Drain-Source Voltage: 600V
Gate-Source Voltage-Continuous: ±30V Drain Current-Continuous(Note 2): 2A
Drain Current-Single Plused(Note 1): 8A Power Dissipation (Note 2): 23W
High Light:

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Product Description

High Input Impedance N Channel Transistor , Field Emission Transistor 600V

 

N Channel Transistor Features

  1. High input impedance and low level drive
  2. Avalanche energy tested
  3. Improved dv/dt capability,high ruggedness

 
N Channel Transistor Applications

  1. High efficiency switch mode power supplies
  2. Power factor correction
  3. Electronic lamp ballast
  4. Uninterruptible power supply
  5. Power switching application

Absolute Maximum Ratings (Tc=25°C)
 

Symbol Parameters Ratings Unit
VDSS

Drain-Source Voltage

600 V
VGS

Gate-Source Voltage-Continuous

±30 V
ID

Drain Current-Continuous(Note 2)

2 A
IDM

Drain Current-Single Plused(Note 1)

8 A
PD

Power Dissipation (Note 2)

23 W
Tj

Max.Operating junction temperature

150

 
Electrical characteristics (Tc=25°C unless otherwise noted)
 

Symbol Parameters Min Typ Max Units Conditions
Static Characteristics
BVDSS

Drain-Source Breakdown

VoltageCurrent (Note 1)

600 -- -- V ID=250µA,VGS=0V,TJ=25°C
VGS(th)

Gate Threshold Voltage

2.0 -- 4.0 V VDS=VGS,ID=250μA
RDS(on)

Drain-Source On-Resistance

-- 3.6 4.0 Ω VGS=10V,ID=1A
IGSS

Gate-Body Leakage Current

-- -- ±100 nA VGS=±30V,VDS=0
IDSS

Zero Gate Voltage Drain Current

-- -- 1 μA VDS=600V,VGS=0
gfs

Forward Transconductance

1.0 -- -- S VDS=15V,ID=1A
Switching Characteristics
Td(on)

Turn-On Delay Time

-- 40 60 ns

VDS=300V,ID=2A,

RG=25Ω(Note 2)

Tr

Rise Time

-- 35 55 ns
Td(off)

Turn-Off Delay Time

-- 70 95 ns
Tf

Fall Time

-- 45 65 ns
Qg

Total Gate Charge

-- 9 15 nC

VDS=480V,VGS=10V,

ID=2A(Note 2)

 

Qgs

Gate-Source Charge

-- 1.5 -- nC
Qgd

Gate-Drain Charge

-- 4.5 -- nC
Dynamic Characteristics
Ciss

Input Capacitance

-- 260 350 pF

VDS=25V,VGS=0,

f=1MHz

 

Coss

Output Capacitance

-- 38 50 pF
Crss

Reverse Transfer Capacitance

-- 8 20 pF
IS

Continuous Drain-Source Diode

Forward Current(Note 2)

-- -- 2 A  
VSD

Diode Forward On-Voltage

-- -- 1.4 V IS=2A,VGS=0
Rth(j-c)

Thermal Resistance, Junction to Case

-- -- 5.5 ℃/W  

 

Our Service

 

 

1. Efficient Servicer: Professional and Efficient services, Feedback in 24 hours. Full range products for choice.

 

2. Factory Choice: We are professional supplier. OEM / ODM are Available. We also supply search service for you if you need . We have professional purchasing department to supply the latest goods and best seller products.

 

3. QC Service: Great Quality Check, We know how to do good check quality. We have 19 years experience professional QC team.

 

4. Logistic Service: We would like to assist our customer to make QC + collect goods from other supplier.

 

5. Long-Term Service: We are looking for long-term business PARTNER! So we supply excellent service and can design as your request.


 
High Input Impedance N Channel Transistor , Field Emission Transistor 600V 0

High Input Impedance N Channel Transistor , Field Emission Transistor 600V 1

High Input Impedance N Channel Transistor , Field Emission Transistor 600V 2

High Input Impedance N Channel Transistor , Field Emission Transistor 600V 3
 

Contact Details
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Phone Number : 86-13423609933

WhatsApp : +8613423609933