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Low Gate Charge N Channel Field Effect Transistor With Low Level Drive

Basic Information
Place of Origin: Jiangxi, China
Brand Name: JC
Certification: RoHS
Model Number: OSPF13N50
Minimum Order Quantity: Negotiable
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Detail Information
Name: N Channel Field Effect Transistor Drain-Source Voltage: 500V
Gate-Source Voltage-Continuous: ±30V Drain Current-Continuous(Note 2): 13A
Drain Current-Single Plused(Note 1): 52A Power Dissipation (Note 2): 48W
High Light:

mosfet power transistor

,

high power transistor


Product Description

 Low Gate Charge N Channel Field Effect Transistor With Low Level Drive

 

N Channel Field Effect Transistor Features

 

  1. High input impedance and low level drive
  2. Avalanche energy tested
  3. Improved dv/dt capability,high ruggedness

 

N Channel Field Effect Transistor Application

 

  1. High power DC/DC converters and switch mode power supplies
  2. DC motor control
  3. Automotive applications
  4. Uninterruptible power supply

 

Absolute Maximum Ratings (Tc=25°C)
 

Symbol Parameters Ratings Unit
VDSS

Drain-Source Voltage

500 V
VGS

Gate-Source Voltage-Continuous

±30 V
ID

Drain Current-Continuous(Note 2)

13 A
IDM

Drain Current-Single Plused(Note 1)

52 A
PD

Power Dissipation (Note 2)

48 W
Tj

Max.Operating junction temperature

150

 
Electrical characteristics (Tc=25°C unless otherwise noted)

Symbol Parameters Min Typ Max Units Conditions
Static Characteristics
BVDSS

Drain-Source Breakdown
VoltageCurrent (Note 1)

500 -- -- V ID=250µA,VGS=0V,TJ=25°C
VGS(th)

Gate Threshold Voltage

2.0 -- 4.0 V VDS=VGS,ID=250μA
RDS(on)

Drain-Source On-Resistance

-- 0.35 0.4 Ω VGS=10V,ID=6.5A
IGSS

Gate-Body Leakage Current

-- -- ±100 nA VGS=±30V,VDS=0
IDSS

Zero Gate Voltage Drain Current

-- -- 1 μA VDS=500V,VGS=0
Switching Characteristics
Td(on)

Turn-On Delay Time

-- 25 60 ns

VDS=250V,ID=13A,
RG=25Ω(Note 2)

Tr

Rise Time

-- 100 210 ns
Td(off)

Turn-Off Delay Time

-- 130 270 ns
Tf

Fall Time

--

100
 

210 ns
Qg

Total Gate Charge

-- 43 56 nC

VDS=400,VGS=10V,
ID=13A(Note 2)

 

Qgs

Gate-Source Charge

-- 7.5 -- nC
Qgd

Gate-Drain Charge

-- 18.5 -- nC
Dynamic Characteristics
Ciss

Input Capacitance

-- 1580 2055 pF

VDS=25V,VGS=0,
f=1MHz

 

Coss

Output Capacitance

-- 180 235 pF
Crss

Reverse Transfer Capacitance

-- 20 25 pF
IS

Continuous Drain-Source Diode
Forward Current(Note 2)

-- -- 13 A  
VSD

Diode Forward On-Voltage

-- -- 1.4 V IS=13A,VGS=0
Rth(j-c)

Thermal Resistance, Junction to
Case

-- -- 2.58 ℃/W  

 

Our Service

 

 

1. Efficient Servicer: Professional and Efficient services, Feedback in 24 hours. Full range products for choice.

 

2. Factory Choice: We are professional supplier. OEM / ODM are Available. We also supply search service for you if you need . We have professional purchasing department to supply the latest goods and best seller products.

 

3. QC Service: Great Quality Check, We know how to do good check quality. We have 19 years experience professional QC team.

 

4. Logistic Service: We would like to assist our customer to make QC + collect goods from other supplier.

 

5. Long-Term Service: We are looking for long-term business PARTNER! So we supply excellent service and can design as your request.

 
Low Gate Charge N Channel Field Effect Transistor With Low Level Drive 0
Low Gate Charge N Channel Field Effect Transistor With Low Level Drive 1
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Contact Details
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Phone Number : 86-13423609933

WhatsApp : +8613423609933