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Metal Oxide Semiconductor Field Effect Transistor With RoHS Certificate

Basic Information
Place of Origin: Jiangxi, China
Brand Name: JC
Certification: RoHS
Model Number: OSPF7N60-
Minimum Order Quantity: Negotiable
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Detail Information
Name: Metal Oxide Semiconductor Field Effect Transistor Drain-Source Voltage: 600V
Gate-Source Voltage-Continuous: ±30V Drain Current-Continuous(Note 2): 7A
Drain Current-Single Plused(Note 1): 28A Power Dissipation (Note 2): 48W
High Light:

mosfet power transistor

,

high power transistor


Product Description

Metal Oxide Semiconductor Field Effect Transistor With RoHS Certificate

 

Metal Oxide Semiconductor Field Effect Transistor Features

  1. Low gate charge
  2. Low Rdson(typical 5.5mΩ)
  3. Fast switching
  4. 100% avalanche tested
  5. Improved dv/dt capability
  6. RoHS product
  7. Avalanche energy tested
  8. Improved dv/dt capability,high ruggedness

 
Metal Oxide Semiconductor Field Effect Transistor Applications

  1. High efficiency switch mode power supplies
  2. Electronic lamp ballast

Absolute Maximum Ratings (Tc=25°C)
 

Symbol Parameters Ratings Unit
VDSS

Drain-Source Voltage

600 V
VGS

Gate-Source Voltage-Continuous

±30 V
ID

Drain Current-Continuous(Note 2)

7 A
IDM

Drain Current-Single Plused(Note 1)

28 A
PD

Power Dissipation (Note 2)

48 W
Tj

Max.Operating junction temperature

150

 
Electrical characteristics (Tc=25°C unless otherwise noted)
 

Symbol Parameters Min Typ Max Units Conditions
Static Characteristics
BVDSS

Drain-Source Breakdown
VoltageCurrent (Note 1)

600 -- -- V ID=250µA,VGS=0V,TJ=25°C
VGS(th)

Gate Threshold Voltage

2.0 -- 4.0 V VDS=VGS,ID=250μA
RDS(on)

Drain-Source On-Resistance

-- 0.90 1.05 Ω VGS=10V,ID=3.5A
IGSS

Gate-Body Leakage Current

-- -- ±100 nA VGS=±30V,VDS=0
IDSS

Zero Gate Voltage Drain Current

-- -- 1 μA VDS=600V,VGS=0
gfs

Forward Transconductance

2.3 -- -- S VDS=15V,ID=3.5A
Switching Characteristics
Td(on)

Turn-On Delay Time

-- 20 40 ns

VDS=300V,ID=7A,
RG=25Ω(Note 2)

Tr

Rise Time

-- 55 110 ns
Td(off)

Turn-Off Delay Time

-- 90 180 ns
Tf

Fall Time

-- 60 120 ns
Qg

Total Gate Charge

-- 40 52 nC

VDS=520V,VGS=10V,
ID=7A(Note 2)
 

Qgs

Gate-Source Charge

-- 6.5 -- nC
Qgd

Gate-Drain Charge

-- 16.5 -- nC
Dynamic Characteristics
Ciss

Input Capacitance

-- 970 1260 pF

VDS=25V,VGS=0,
f=1MHz
 

Coss

Output Capacitance

-- 80 110 pF
Crss

Reverse Transfer Capacitance

-- 17 22 pF
IS

Continuous Drain-Source Diode
Forward Current(Note 2)

-- -- 7 A  
VSD

Diode Forward On-Voltage

-- -- 1.4 V IS=7A,VGS=0

 
Our Company
 

Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.
 
Our Advantage:
1. Electronic component specialist and professional.
2. Strong R & D team, experienced research staffs
3. Strong and consistent quality control, same standard as of RoHS.
4. Elite sales team with more than 5 years international trading experience individually.
5. Strong technical support to help customers choose the most appropriate products.
6. Be proud of the product and the competitive price.
 Metal Oxide Semiconductor Field Effect Transistor With RoHS Certificate 0
Metal Oxide Semiconductor Field Effect Transistor With RoHS Certificate 1
Metal Oxide Semiconductor Field Effect Transistor With RoHS Certificate 2
Metal Oxide Semiconductor Field Effect Transistor With RoHS Certificate 3
 

Contact Details
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Phone Number : 86-15216951191

WhatsApp : +8615216951191