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Metal Silicon Junction Schottky Barrier Diode For Surface Mounted Device

Basic Information
Place of Origin: Jiangxi, China
Brand Name: DEC
Certification: RoHS
Model Number: MBRF30200DT-
Minimum Order Quantity: 1000PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Detail Information
Type: Schottky Barrier Diode Repetitive Peak Reverse Voltage: 100V
Working Peak Reverse Voltage: 100V Maximum Average Forward Rectified Current Total Device: 30A
Peak Forward Surge Current: 400A Operating Junction Temperature Range: -65~150 ℃
Storage Temperature Rang: -65~175 ℃ Application: Surface Mounted Device
High Light:

schottky barrier rectifier

,

fast schottky diode


Product Description

Metal Silicon Junction Schottky Barrier Diode For Surface Mounted Device

 

Schottky Barrier Diode Features:

 

For surface mounted applications

Metal silicon junction,majority carrier conduction

Low power loss,high efficiency

Built-in strain relief,ideal for automated placement

High forward surge current capability

High temperature soldering guaranteed:250℃/10 seconds at terminals

High switching frequency

Low forward voltage drop

High efficiency and low power loss

High volume of current and good capability of surge current

 

Schottky Barrier Diode Applications

 

High frequency rectifier of switching mode power supplies

Freewheeling diodes

Polarity protection application

DC-DC converters

 

Schottky Barrier Diode Advantage

 

SBD has the advantages of high switching frequency and low forward voltage, but its reverse breakdown voltage is relatively low, mostly not higher than 60V, and the maximum is only about 100V, which limits its application range. For example, in the switching power supply (SMPS) and power factor correction (PFC) circuits, the freewheeling diode of the power switching device, the transformer secondary uses a high-frequency rectifier diode of 100V or more, and the RCD snubber circuit uses a high-speed diode of 600V to 1.2kV. The PFC boost uses a 600V diode, etc., and only uses a fast recovery epitaxial diode (FRED) and an ultra fast recovery diode (UFRD). The reverse recovery time Trr of UFRD is also above 20 ns, which cannot meet the needs of SMPS of 1 MHz to 3 MHz in fields such as space stations. Even with a SMPS with a hard switch of 100 kHz, due to the large conduction loss and switching loss of the UFRD, the case temperature is high, and a large heat sink is required, so that the volume and weight of the SMPS are increased, which is not compatible with miniaturization and thinning. The development trend. Therefore, the development of high-pressure SBD above 100V has always been a research topic and a hot spot of concern. In recent years, SBD has made breakthroughs. High-voltage SBDs of 150V and 200V have been launched. SBDs with more than 1kV made of new materials have also been successfully developed, thus injecting new vitality and vitality into their applications.

 

Absolute Maximum Ratings (Tc=25°C)

 

 

Type: Schottky Barrier Diode Repetitive Peak Reverse Voltage: 100V
Working Peak Reverse Voltage: 100V Maximum Average Forward Rectified Current Total Device: 30A
Peak Forward Surge Current: 400A Operating Junction Temperature Range: -65~150 ℃
Storage Temperature Rang: -65~175 ℃ Application: Surface Mounted Device

 

Metal Silicon Junction Schottky Barrier Diode For Surface Mounted Device 0

Contact Details
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