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MOSFET Field Effect High Voltage Transistor AP50P03NF P Channel Advanced Power

Basic Information
Place of Origin: shenzhen, China
Brand Name: CANYI
Certification: RoHS
Model Number: AP50P03NF
Minimum Order Quantity: 1000PCS
Price: Negotiated
Packaging Details: Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Delivery Time: 3-7 days
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Detail Information
Type: Plastic Transistor Application: Aload Switch Or In PWM
Forward Transconductance: 20S Drain-Source Breakdown Voltage: -33V
Single Pulse Avalanche Energy: 231mJ Operating Junction And Storage Temperature Range: -55 To 150 ℃
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Product Description

AP50P03NF P-Channel Advanced Power MOSFET field effect high voltage transistor

AP50P03NF.pdf

 

 

Description

 

The AP50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aload switch or in PWM applications.

 

General Features

V DS = -30V,I D = -50A
R DS(ON) < 18mΩ @ V GS =-4.5V
R DS(ON) < 13mΩ @ V GS =-10V
High Power and current handing capability
Lead free product is acquired
Surface mount package

 

Application
PWM applications
Load switch
Power management

                                                                                       

     MOSFET Field Effect High Voltage Transistor AP50P03NF P Channel Advanced Power 0MOSFET Field Effect High Voltage Transistor AP50P03NF P Channel Advanced Power 1

                                                                                                                                                    

Absolute Maximum Ratings (TC=25unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous (T C =25℃) I D -50 A
Drain Current-Continuous (T C =100℃) -24
Drain Current-Pulsed
(Note 1)
IDM -80 A
Maximum Power Dissipation (T C =25℃) P D 3 W
Maximum Power Dissipation (T C =100℃) 1.3
Single pulse avalanche energy
(Note 5)
EAS 231 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150
Thermal Resistance,Junction-to-Ambient
(Note 2)
RθJA 41.67 ℃ /W

 

Electrical Characteristics (TJ=25 , unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit
Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -30 -33 - V
Zero Gate Voltage Drain Current IDSS V DS =-30V,V GS =0V - - -1 μA
Gate-Body Leakage Current IGSS V GS =±20V,V DS =0V - - ±100 nA
Gate Threshold Voltage VGS(th) V DS =V GS ,I D =-250μA -1 -1.5 -3 V
Drain-Source On-State Resistance RDS(ON) V GS =-10V, I D =-10A - 11.5 15 mΩ
V GS =-4.5V, I D =-7A - 18 25 mΩ
Forward Transconductance gFS V DS =-10V,I D =-10A - 20 - S
Input Capacitance C lss V DS =-15V,V GS =0V,F=1.0MHz - 1750 - PF
Output Capacitance Coss - 215 - PF
Reverse Transfer Capacitance C rss - 180 - PF
Turn-on Delay Time td(on)

V DD =-15V, ID=-10A,V GS =-10V,

R GEN =1Ω

- 9 - nS
Turn-on Rise Time t r - 8 - nS
Turn-Off Delay Time td(off) - 28 - nS
Turn-Off Fall Time t f - 10 - nS
Total Gate Charge Q g V DS =-15V,I D =-10A,V GS =-10V - 24 - nC
Gate-Source Charge Q gs - 3.5 - nC
Gate-Drain Charge Q gd - 6 - nC
Diode Forward Current
(Note 2)
I S   - - -12 A
Diode Forward Voltage
(Note 3)
VSD V GS =0V,I S =-12A - - -1.2 V

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. E AS condition: Tj=25℃,V DD =-15V,V G =10V,L=0.5mH,Rg=25Ω, I AS =-34A

 

MOSFET Field Effect High Voltage Transistor AP50P03NF P Channel Advanced Power 2                               

MOSFET Field Effect High Voltage Transistor AP50P03NF P Channel Advanced Power 3

MOSFET Field Effect High Voltage Transistor AP50P03NF P Channel Advanced Power 4

MOSFET Field Effect High Voltage Transistor AP50P03NF P Channel Advanced Power 5

For more information please refer to the attachment, or contact us:

Contact: Roundy
Tel: 86-755-82853859
Fax: 86-755-83229774
Email:Roundy@doublelight.com.cn
Wechat:15216951191
Skype:Roundy@doublelight.com.cn
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MOSFET Field Effect High Voltage Transistor AP50P03NF P Channel Advanced Power 6

Contact Details
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Phone Number : 86-13750005407

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