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N Channel Mosfet Field Effect Transistors 10N60 600V For Switched Mode Power Supplies

Basic Information
Place of Origin: Guangdong, China
Brand Name: Canyi
Certification: RoHS
Model Number: 10N60
Minimum Order Quantity: 1000PCS
Price: US$ 0.1-0.19 per unit (Pieces)
Packaging Details: Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Delivery Time: 3-5 days
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 1000,000,000PCS Per Day
Detail Information
Name: 10N60 MOSFET Package Type: TO-220,TO-220F
Type: Field-Effect Transistor VDSS: 600V
Lead Time: 3-5 Days
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Product Description

10N60 600V n channel mosfet field effect transistors for switched mode power supplies

 

Datasheet:CY-10N60F.pdf

 

Field effect transistor features:

  • Drain Current is 9.5A, 600V, RDS(on) =0.73Ω @VGS =10 V
  • Low gate charge MOSFET simplifies gate drive design( typical 9.0 nC)
  • Fast switching
  • 100% avalanche tested to make sure quality before ship
  • This 10N60 improved rate of change of voltage over time
Mosfet General Description:
The10N60H N Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge to pology
.
N Channel Mosfet Field Effect Transistors 10N60 600V For Switched Mode Power Supplies 0
 

Absolute Maximum Ratings (Tc=25°C)
 

Symbol Parameters FQPF10N60C Unit
VDSS

Drain-Source Voltage

600 V
VGS

Gate-Source Voltage-Continuous

±30 V
ID

Drain Current-Continuous

9.5* A
IDM

Drain Current-Single Plused

38* A
PD

Power Dissipation

50 W
Tj

Max.Operating junction temperature

-55~150

 
Electrical characteristics (Tc=25°C unless otherwise noted)
 

Symbol Parameters Min Typ Max Units Conditions
Static Characteristics
BVDSS

Drain-Source Breakdown
VoltageCurrent (Note 1)

600 -- -- V VGS =0 V, ID =250 µA
VGS(th)

Gate Threshold Voltage

2.0 -- 4.0 V VDS=VGS,ID=250μA
RDS(on)

Drain-Source On-Resistance

-- 0.6 0.73 Ω

VGS=10V,ID=4.75A

IGSS

Gate-Body Leakage Current

-- -- ±100 nA VGS=±30V,VDS=0
IDSS

Zero Gate Voltage Drain Current

-- -- 1 μA VDS=600V,VGS=0
gfs

Forward Transconductance

-- 8.0 -- S VDS=40V,ID=4.75A (Note 4)
Switching Characteristics
Td(on)

Turn-On Delay Time

-- 23 55 ns

VDS=300V,ID=9.5A,
RG=25Ω(Note 4)

Tr

Rise Time

-- 69 150 ns
Td(off)

Turn-Off Delay Time

-- 144 300 ns
Tf

Fall Time

-- 77 165 ns
Qg

Total Gate Charge

-- 44 57 nC

VDS=480V,VGS=10V,
ID=9.5A(Note 2)
 

Qgs

Gate-Source Charge

-- 6.7 -- nC
Qgd

Gate-Drain Charge

--

18.5

-- nC
Dynamic Characteristics
Ciss

Input Capacitance

-- 1570 2040 pF

VDS=25V,VGS=0,
f=1.0MHz
 

Coss

Output Capacitance

-- 166 215 pF
Crss

Reverse Transfer Capacitance

-- 18 24 pF
IS

Continuous Drain-Source Diode
Forward Current(Note 2)

-- -- 9.5 A  
VSD

Diode Forward On-Voltage

-- -- 1.4 V IS=9.5A,VGS=0V

 
Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.

N Channel Mosfet Field Effect Transistors 10N60 600V For Switched Mode Power Supplies 1

 

We are professional Electronic Components at competitive price,located in Shenzhen City,China.
Should you have any inquires or comments,we would be glad to talk in details through skype/email/Wechat/WhatsApp or any way you like.

 

Contact:Wendy Yan
Email:wendy@doublelight.com.cn
Wechat:+86 13423609933
Skype:wendy@doublelight.com.cn
Whatsapp:+86 13423609933

 

Contact Details
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Phone Number : 86-13750005407

WhatsApp : +8613750005407