products

OEM High Power Jfet Transistor , Npn Transistor Amplifier 650V

Basic Information
Place of Origin: Jiangxi, China
Brand Name: JC
Certification: RoHS
Model Number: OSPF12N65C
Minimum Order Quantity: Negotiable
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Detail Information
Name: Power Jfet Transistor Drain-Source Voltage: 650V
Gate-Source Voltage-Continuous: ±30V Drain Current-Continuous(Note 2): 12A
Drain Current-Single Plused(Note 1): 48A Power Dissipation (Note 2): 50W
High Light:

mosfet power transistor

,

high power transistor


Product Description

OEM High Power Jfet Transistor , Npn Transistor Amplifier 650V

 

Power Jfet Transistor Features

 

  1. High input impedance and low level drive
  2. Avalanche energy tested
  3. Improved dv/dt capability,high ruggedness
  4. Low gate charge
  5. Low Rdson(typical 5.5mΩ)
  6. Fast switching

 
Power Jfet Transistor Applications

  1. High efficiency switch mode power supplies
  2. Power factor correction

Absolute Maximum Ratings (Tc=25°C)
 

Symbol Parameters Ratings Unit
VDSS

Drain-Source Voltage

650 V
VGS

Gate-Source Voltage-Continuous

±30 V
ID

Drain Current-Continuous(Note 2)

12 A
IDM

Drain Current-Single Plused(Note 1)

48 A
PD

Power Dissipation (Note 2)

51 W
Tj

Max.Operating junction temperature

150

 
Electrical characteristics (Tc=25°C unless otherwise noted)
 

Symbol Parameters Min Typ Max Units Conditions
Static Characteristics
BVDSS

Drain-Source Breakdown

VoltageCurrent (Note 1)

650 -- -- V ID=250µA,VGS=0V,TJ=25°C
VGS(th)

Gate Threshold Voltage

2.0 -- 4.0 V VDS=VGS,ID=250μA
RDS(on)

Drain-Source On-Resistance

-- 0.65 0.68 Ω VGS=10V,ID=6A
IGSS

Gate-Body Leakage Current

-- -- ±100 nA VGS=±30V,VDS=0
IDSS

Zero Gate Voltage Drain Current

-- -- 1 μA VDS=650V,VGS=0
gfs

Forward Transconductance

3.6 -- -- S VDS=15V,ID=5A
Switching Characteristics
Td(on)

Turn-On Delay Time

-- 30 75 ns

VDS=325V,ID=12A,

RG=25Ω(Note 2)

Tr

Rise Time

-- 115 240 ns
Td(off)

Turn-Off Delay Time

-- 95 205 ns
Tf

Fall Time

-- 85 180 ns
Qg

Total Gate Charge

-- 42 55 nC

VDS=520,VGS=10V,

ID=12A(Note 2)

 

Qgs

Gate-Source Charge

-- 8.5 -- nC
Qgd

Gate-Drain Charge

-- 21.5 -- nC
Dynamic Characteristics
Ciss

Input Capacitance

-- 1460 -- pF

VDS=25V,VGS=0,

f=1MHz

 

Coss

Output Capacitance

-- 205 -- pF
Crss

Reverse Transfer Capacitance

-- 24.8 -- pF
IS

Continuous Drain-Source Diode

Forward Current(Note 2)

-- -- 12 A  
VSD

Diode Forward On-Voltage

-- -- 1.4 V IS=12A,VGS=0
Rth(j-c)

Thermal Resistance, Junction to Case

-- -- 3.65 ℃/W  

 
Our Company
 

Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.
 
Our Advantage:
1. Electronic component specialist and professional.
2. Strong R & D team, experienced research staffs
3. Strong and consistent quality control, same standard as of RoHS.
4. Elite sales team with more than 5 years international trading experience individually.
5. Strong technical support to help customers choose the most appropriate products.
6. Be proud of the product and the competitive price.
 OEM High Power Jfet Transistor , Npn Transistor Amplifier 650V 0

OEM High Power Jfet Transistor , Npn Transistor Amplifier 650V 1

OEM High Power Jfet Transistor , Npn Transistor Amplifier 650V 2

OEM High Power Jfet Transistor , Npn Transistor Amplifier 650V 3

OEM High Power Jfet Transistor , Npn Transistor Amplifier 650V 4

OEM High Power Jfet Transistor , Npn Transistor Amplifier 650V 5
 

Contact Details
Sales Manager

WhatsApp : +8613750005407