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Organic N Channel Field Effect Transistor For Electronic Lamp Ballast

Basic Information
Place of Origin: Jiangxi, China
Brand Name: JC
Certification: RoHS
Model Number: OSP55N06-
Minimum Order Quantity: Negotiable
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Detail Information
Name: N Channel Field Effect Transistor Drain-Source Voltage: 60V
Gate-Source Voltage-Continuous: ±20V Drain Current-Continuous(Note 2): 55A
Drain Current-Single Plused(Note 1): 200A Power Dissipation (Note 2): 130W
High Light:

mosfet power transistor

,

high power transistor


Product Description

Organic N Channel Field Effect Transistor For Electronic Lamp Ballast
 
N Channel Field Effect Transistor  Features

  1. High input impedance and low level drive
  2. Avalanche energy tested
  3. Improved dv/dt capability,high ruggedness

 

Absolute Maximum Ratings (Tc=25°C)
 

SymbolParametersRatingsUnit
VDSS

Drain-Source Voltage

60V
VGS

Gate-Source Voltage-Continuous

±20V
ID

Drain Current-Continuous(Note 2)

55A
IDM

Drain Current-Single Plused(Note 1)

200A
PD

Power Dissipation (Note 2)

130W
Tj

Max.Operating junction temperature

150

 
Electrical characteristics (Tc=25°C unless otherwise noted)
 

SymbolParametersMinTypMaxUnitsConditions
Static Characteristics
BVDSS

Drain-Source Breakdown
VoltageCurrent (Note 1)

60----VID=250µA,VGS=0V,TJ=25°C
VGS(th)

Gate Threshold Voltage

2.0--4.0VVDS=VGS,ID=250μA
RDS(on)

Drain-Source On-Resistance

--1822VGS=10V,ID=25A
IGSS

Gate-Body Leakage Current

----±100nAVGS=±20V,VDS=0
IDSS

Zero Gate Voltage Drain Current

----1μAVDS=60V,VGS=0
gfs

Forward Transconductance

15----SVDS=30V,ID=25A
Switching Characteristics
Td(on)

Turn-On Delay Time

--60--ns

VDS=30V,ID=25A,
RG=50Ω(Note 2)

Tr

Rise Time

--185--ns
Td(off)

Turn-Off Delay Time

--75--ns
Tf

Fall Time

--60--ns
Qg

Total Gate Charge

--39--nC

VDS=48V,VGS=10V,
ID=50A(Note 2)
 

Qgs

Gate-Source Charge

--9.3--nC
Qgd

Gate-Drain Charge

--13--nC
Dynamic Characteristics
Ciss

Input Capacitance

--880--pF

VDS=25V,VGS=0,
f=1MHz
 

Coss

Output Capacitance

--430--pF
Crss

Reverse Transfer Capacitance

--110--pF
IS

Continuous Drain-Source Diode
Forward Current(Note 2)

----55A 
VSD

Diode Forward On-Voltage

----1.4VIS=20A,VGS=0
Rth(j-c)

Thermal Resistance, Junction to Case

----1.15℃/W 

 
Our Company
 

Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.
 
 
Organic N Channel Field Effect Transistor For Electronic Lamp Ballast 0
Organic N Channel Field Effect Transistor For Electronic Lamp Ballast 1
Organic N Channel Field Effect Transistor For Electronic Lamp Ballast 2
Organic N Channel Field Effect Transistor For Electronic Lamp Ballast 3
 

Contact Details
Sales Manager

WhatsApp : +8613750005407