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Original Mosfet Power Transistor / Plastic P Channel Transistor

Basic Information
Place of Origin: Jiangxi, China
Brand Name: JC
Certification: RoHS
Model Number: OSPF18N50C
Minimum Order Quantity: Negotiable
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Detail Information
Name: Mosfet Power Transistor Drain-Source Voltage: 500V
Gate-Source Voltage-Continuous: ±30V Drain Current-Continuous(Note 2): 18A
Drain Current-Single Plused(Note 1): 56A Power Dissipation (Note 2): 52W
High Light:

mosfet power transistor

,

high power transistor


Product Description

Original Mosfet Power Transistor / Plastic P Channel Transistor

 

Mosfet Power Transistor Features

 

Low gate charge

Low Rdson(typical 5.5mΩ)

Fast switching

100% avalanche tested

Improved dv/dt capability

RoHS product

 
Mosfet Power Transistor Applications
 

  1. High efficiency switch mode power supplies
  2. Power factor correction
  3. Electronic lamp ballast

Absolute Maximum Ratings (Tc=25°C)
 

Symbol Parameters Ratings Unit
VDSS

Drain-Source Voltage

500 V
VGS

Gate-Source Voltage-Continuous

±30 V
ID

Drain Current-Continuous(Note 2)

18 A
IDM

Drain Current-Single Plused(Note 1)

56 A
PD

Power Dissipation (Note 2)

52 W
Tj

Max.Operating junction temperature

150

 
Electrical characteristics (Tc=25°C unless otherwise noted)

Symbol Parameters Min Typ Max Units Conditions
Static Characteristics
BVDSS

Drain-Source Breakdown
VoltageCurrent (Note 1)

500 -- -- V ID=250µA,VGS=0V,TJ=25°C
VGS(th)

Gate Threshold Voltage

3.0 -- 5.0 V VDS=VGS,ID=250μA
RDS(on)

Drain-Source On-Resistance

-- 0.4 0.7 Ω VGS=10V,ID=6.5A
IGSS

Gate-Body Leakage Current

-- -- ±100 nA VGS=±30V,VDS=0
IDSS

Zero Gate Voltage Drain Current

-- -- 1 μA VDS=500V,VGS=0
Switching Characteristics
Td(on)

Turn-On Delay Time

-- 25 60 ns

VDS=250V,ID=13A,
RG=25Ω(Note 2)

Tr

Rise Time

-- 100 210 ns
Td(off)

Turn-Off Delay Time

-- 130 270 ns
Tf

Fall Time

--

100
 

210 ns
Qg

Total Gate Charge

-- 43 56 nC

VDS=400,VGS=10V,
ID=13A(Note 2)

 

Qgs

Gate-Source Charge

-- 7.5 -- nC
Qgd

Gate-Drain Charge

-- 18.5 -- nC
Dynamic Characteristics
Ciss

Input Capacitance

-- 1580 2055 pF

VDS=25V,VGS=0,
f=1MHz

 

Coss

Output Capacitance

-- 180 235 pF
Crss

Reverse Transfer Capacitance

-- 20 25 pF
IS

Continuous Drain-Source Diode
Forward Current(Note 2)

-- -- 13 A  
VSD

Diode Forward On-Voltage

-- -- 1.4 V IS=13A,VGS=0
Rth(j-c)

Thermal Resistance, Junction to
Case

-- -- 2.58 ℃/W  

 

 
Our Advantage:


1. Electronic component specialist and professional.
2. Strong R & D team, experienced research staffs
3. Strong and consistent quality control, same standard as of RoHS.
4. Elite sales team with more than 5 years international trading experience individually.
5. Strong technical support to help customers choose the most appropriate products.
6. Be proud of the product and the competitive price.
 Original Mosfet Power Transistor / Plastic P Channel Transistor 0
Original Mosfet Power Transistor / Plastic P Channel Transistor 1
Original Mosfet Power Transistor / Plastic P Channel Transistor 2
Original Mosfet Power Transistor / Plastic P Channel Transistor 3

 

Contact Details
Peng

Phone Number : 86-13750005407

WhatsApp : +8613750005407