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SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode

Basic Information
Place of Origin: Guangdong, China
Brand Name: CANYI
Certification: RoHS
Model Number: SI2301
Minimum Order Quantity: 1000PCS
Price: Negotiated
Packaging Details: Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Delivery Time: 3-5 days
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Detail Information
Type: Silicon Transistor Package Type: Surface Mount
Package: SOT-23 VDS: -20V
TJ, Tstg: -55 To 150℃ Sample: Free
Port: Shenzhen
High Light:

mosfet power transistor

,

high power transistor


Product Description

SI2301 MOSFETs FETs SOT-23 MOS power field effect transistor 2.5A 20V A1SHB P-channel Enhancement Mode
 
Features:

  • Advanced trench process technology
  • High Density Cell Design For Ultra Low On-Resistance

Maximum Ratings and Thermal Characteristics (TA = 25unless otherwise noted)
ParameterSymbolLimitUnit
Drain-Source VoltageVDS-20V
Gate-Source VoltageVGS±8
Continuous Drain CurrentID-2.2A

 
Pulsed Drain Current 1)

IDM-8
Maximum Power Dissipation 2)TA=25℃PD1.25W
TA=75℃0.8
Operating Junction and Storage Temperature RangeTJ, Tstg-55 to 150
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)RthJA100 
Junction-to-Ambient Thermal Resistance (PCB mounted) 3)166℃/W

 
Notes
1)Pulse width limited by maximum junction temperature.

2)Surface Mounted on FR4 Board, t ≤5 sec.

3)Surface Mounted on FR4 Board.
 
ELECTRICAL CHARACTERISTICS

ParameterSymbolTest ConditionMin.Typ.Max.Unit
Static
Drain-Source Breakdown VoltageBVDSS VGS = 0V, ID = -250uA-20  V
Drain-Source On-State Resistance1)RDS(on)VGS = -4.5V, ID = -2.8A 105130mΩ
VGS = -2.5V, ID = -2.0A 145190
Gate Threshold VoltageVGS(th)VDS = VGS ID = -250uA-0.45  v
Zero Gate Voltage Drain CurrentIDSSVDS = -20V, VGS = -0V  -1uA
VDS = -20V, VGS = -0V TJ=55℃  -10
Gate Body LeakageIGSSVGS=±8v,VDS= 0V  ±100nA
Forward Transconductance 1)gfsVDS= -5V,ID= -2.8A 6.5-S
Dynamic
Total Gate ChargeQg

VDS = -6V, ID ≌ -2.8A
VGS = -4.5V

 5.810nC
Gate-Source ChargeQgs 0.85 
Gate-Drain ChargeQgd 1.7 
Turn-On Delay Timetd(on)

VDD = -6V, RL=6Ω ID≌-1.A, VGEN = -4.5V
RG = 6Ω

 1325ns
Turn-On Rise Timetr 3660
Turn-Off Delay Timetd(off) 4270
Turn-Off Fall Timetf 3460
Input CapacitanceCiss

 
VDS = -6V, VGS = 0V
f = 1.0 MHz
 

 415 pF
Output CapacitanceCoss 223 
Reverse Transfer CapacitanceCrss 87 
Source-Drain Diode
Max. Diode Forward CurrentISIS = -1.6A, VGS = 0V  -1.6A
Diode Forward VoltageVSD -0.8-1.2

V

1)Pulse test: pulse width ≤300us, duty cycle≤2%

SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode 0

 
Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.
Our service:
1. Efficient Servicer: Professional and Efficient services, Feedback in 24 hours. Full range products for choice.
 
2. Factory Choice: We are professional supplier. OEM / ODM are Available. We also supply search service for you if you need . We have professional purchasing department to supply the latest goods and best seller products.
 
3. QC Service: Great Quality Check, We know how to do good check quality. We have 19 years experience professional QC team.
 
4. Logistic Service: We would like to assist our customer to make QC + collect goods from other supplier.
 
5. Long-Term Service: We are looking for long-term business PARTNER! So we supply excellent service and can design as your request.
 
SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode 1

Contact Details
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Phone Number : 86-13750005407

WhatsApp : +8613750005407