OSDH30N10,30N10,Field effect tube,MOSFET
30N10
3A 100V TO-263 30N10,Field effect tube,MOSFET,Contact us to provide more detailed product information.MOS tube manufacturers and sellers from China provide quality products and services, and look forward to your cooperation.
Quantity
3A 100V TO-263 30N10,Field effect tube,MOSFET,Contact us to provide more detailed product information.MOS tube manufacturers and sellers from China provide quality products and services, and look forward to your cooperation.
Transistor-FET, MOSFET package rewind Type of FET N channel technology MOSFET (metal oxide) Drain-source voltage (Vdss) 100 V Current at 25°C-continuous drain (Id) 30A（Tc） Driving voltage (maximum Rds On, minimum Rds On) 4.5V，10V On-resistance with different Id and Vgs (maximum) 1mω @ 30A, 10V Vgs(th) when Id is different (maximum) 2.4V @ 29µA Gate charge (Qg) at different Vgs (maximum) 31 nC @ 10 V Vgs (maximum) ±20V Input capacitance (Ciss) at different Vds (maximum) 1976 pF @ 25 V FET function - Power dissipation (maximum) 57W（Tc） Working temperature -55°C ~ 175°C（TJ） Installation type Surface mount type Supplier device package PG-TO263 Package/housing TO-263
Transistor-FET, MOSFET package rewind Type of FET N channel technology MOSFET (metal oxide) Drain-source voltage (Vdss) 100 V Current at 25°C-continuous drain (Id) 30A（Tc） Driving voltage (maximum Rds On, minimum Rds On) 4.5V，10V On-resistance with different Id and Vgs (maximum) 1mω @ 30A, 10V Vgs(th) when Id is different (maximum) 2.4V @ 29µA Gate charge (Qg) at different Vgs (maximum) 31 nC @ 10 V Vgs (maximum) ±20V Input capacitance (Ciss) at different Vds (maximum) 1976 pF @ 25 V FET function - Power dissipation (maximum) 57W（Tc） Working temperature -55°C ~ 175°C（TJ） Installation type Surface mount type Supplier device package PG-TO263 Package/housing TO-263