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OSH064N,IRFP064NPBF,Field effect tube,MOSFET

Model NO. IRFP064NPBF

IRFP064NPBF,Field effect tube,MOSFET,Contact us to provide more detailed product information.MOS tube manufacturers and sellers from China provide quality products and services, and look forward to your cooperation.

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110A 55V TO-247 IRFP064NPBF,Field effect tube,MOSFET,Contact us to provide more detailed product information.MOS tube manufacturers and sellers from China provide quality products and services, and look forward to your cooperation.
Transistor-FET, MOSFET
package
pipe fitting
Type of FET
N channel
technology
MOSFET (metal oxide)
Drain-source voltage (Vdss)
55 V
Current at 25°C-continuous drain (Id)
110A（Tc）
Driving voltage (maximum Rds On, minimum Rds On)
10V
On-resistance with different Id and Vgs (maximum)
8 mω @ 59A, 10V
Vgs(th) when Id is different (maximum)
4V @ 250µA
Gate charge (Qg) at different Vgs (maximum)
170 nC @ 10 V
Vgs (maximum)
±20V
Input capacitance (Ciss) at different Vds (maximum)
4000 pF @ 25 V
FET function
-
Power dissipation (maximum)
200W（Tc）
Working temperature
-55°C ~ 175°C（TJ）
Installation type
through-hole
Supplier device package
TO-247AC
Package/housing
TO-247-3