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60V TO-263 N Channel Transistor , TO-220 Advanced Power Field Effect Transistor

Basic Information
Place of Origin: Guangdong, China
Brand Name: CANYI
Certification: RoHS
Model Number: TW60N06C
Minimum Order Quantity: Negotiable
Price: Negotiated
Packaging Details: Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Delivery Time: 3-5 days
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Detail Information
Type: N Channel MOSFET Transistor Package Type: THT
Package: TO-220 TO-263 VDS: 60V
Maximum Power Dissipation: 115W Sample: Free
High Light:

mosfet power transistor

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high power transistor


Product Description

60V TO-263 n channel transistor TO-220 advanced power field effect transistor

Mosfet n channel features:

  • FET Type:N-Channel
  • Enhancement mode
  • Very low on-resistance
  • Flexible and very practical High switching capability
  • 100% Avalanche Tested before sending to customers
  • Pb-free lead plating; RoHS compliant
  • Drain to Source Voltage (Vdss):60V

 

60V TO-263 N Channel Transistor , TO-220 Advanced Power Field Effect Transistor 0
 

Maximum Ratings and Thermal Characteristics (TA = 25unless otherwise note

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20
Continuous Drain Current ID 60 A

 
Pulsed Drain Current

IDM 45
Power Dissipation PD 115 W
Junction Temperature TJ -55~+175
Storage Temperature TSTG -55~+175

Electrical Characteristics (TA=25°C, unless otherwise noted)

 

Parameter Symbol Test Condition Min. Typ. Max. Unit
Static Electrical Characteristics @ TC = 25°C (unless otherwise stated)
Drain-Source Breakdown Voltage V(BR) DSS VGS = 0V, ID = -250uA 60 - - V
Zero Gate Voltage Drain Current(Tc=25℃)

IDSS

 

VDS = 60V, VGS = 0V - - 1 uA
Zero Gate Voltage Drain Current(Tc=125℃) VDS = 60V, VGS = 0V - - 100
Gate-Body Leakage Current IGSS VGS=±20v,VDS= 0V - - ±100 nA
Drain-Source On-State Resistance(Note 3) RDS(on) VGS=10V, ID=40A - 9 12 mΩ
Dynamic Electrical Characteristics @ T C= 25°C (unless otherwise stated)
Input Capacitance Ciss

VDS = 24V, VGS = 0V

f = 1 MHz

- 1860 - pF
Output Capacitance Coss - 150 -
Reverse Transfer Capacitance Crss - 95 -
Total Gate Charge Qg

VDS=30V,ID=10A,

VGS=10V

- 26 - nC
Gate-Source Charge Qgs - 6.5 -
Gate-Drain Charge Qgd - 4.5 -
Switching Characteristics
Turn-On Delay Time td(on)

VDD = 30V,,ID=10A,

RG = 6.8Ω,VDS=10V

 

- 9 - ns
Turn-On Rise Time tr - 5 -
Turn-Off Delay Time td(off) - 28 -
Turn-Off Fall Time tf - 4 -
Source- Drain Diode Characteristics@ TC = 25°C (unless otherwise stated)
Diode Forward Voltage VSD ISD=40A,VGS=0V - 0.91 1.2 V
Reverse Recovery Time trr

Tj=25℃,Isd=20A,

VGS=0V

di/dt=100A/μs

- 23 - ns
Reverse Recovery Charge Qrr - 52 - nC

 

Note :
1.Pulse width ≤ 300μs; duty cycle≤ 2%.
 

We are professional Electronic Components at competitive price,located in Shenzhen City,China.
Should you have any inquires or comments,we would be glad to talk in details through skype/email/Wechat/WhatsApp or any way you like.

 

Contact:Wendy Yan
Email:wendy@schottkysignaldiode.com
Whatsapp/Wechat:+86 13423609933
Skype:wendy@doublelight.com.cn

 


 

Contact Details
wendy

Phone Number : 86-13423609933

WhatsApp : +8613423609933