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Integrated Circuit N Channel Transistor Mosfet SMD Electronic Component AP70N03NF

Basic Information
Place of Origin: Guangdong, China
Brand Name: CANYI
Certification: RoHS
Model Number: AP70N03NF
Minimum Order Quantity: 1000PCS
Price: Negotiated
Packaging Details: Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Delivery Time: 3-5 days
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Detail Information
Type: Plastic Transistor Package: SOP-8
TJ, Tstg: -55 To 150℃ Shipping By: DHL\UPS\Fedex\EMS\HK Post
Lead Time: 2-3days Application: For VCD, DVD, Calculator, Etc.
High Light:

mosfet power transistor

,

high power transistor


Product Description

AP70N03NF.pdfAP70N03NF Transistor MOSFET SMD N-Channel Electronic Component for Integrated Circuit

 

 

Description

 

The AP70N03NF uses advanced trench technology to provide excellent RDS(ON), low gate 6][charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a

 

Battery protection or in other Switching application.

 

General Features

VDS = 30V ID =70A

RDS(ON) < 5.5mΩ VGS=10V

 

         N-Channel Advanced Power MOSFET                                                                                           DFN5*6-8L

Integrated Circuit N Channel Transistor Mosfet SMD Electronic Component AP70N03NF 0     Integrated Circuit N Channel Transistor Mosfet SMD Electronic Component AP70N03NF 1

                                                                                                                                                          N-Channel MOSFET

 

 

Absolute Maximum Ratings (TC=25unless otherwise noted)

  Symbol Parameter Rating Units  
  VDS Drain-Source Voltage 30 V  
           
  VGS Gate-Source Voltage ±20 V  
           
  ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 70 A  
  ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 51 A  
  ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 15 A  
  ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 12 A  
  IDM Pulsed Drain Current2 160 A  
  EAS Single Pulse Avalanche Energy3 115.2 mJ  
  IAS Avalanche Current 48 A  
  PD@TC=25℃ Total Power Dissipation4 59 W  
  PD@TA=25℃ Total Power Dissipation4 2 W  
  TSTG Storage Temperature Range -55 to 150  
           
  TJ Operating Junction Temperature Range -55 to 150  
           
  RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W  
  RθJC Thermal Resistance Junction-Case1 2.1 ℃/W  
           
           

Integrated Circuit N Channel Transistor Mosfet SMD Electronic Component AP70N03NF 2

 

Electrical Characteristics (TJ=25 , unless otherwise noted)

 

Symbol Parameter Conditions     Min. Typ. Max. Unit  
                   
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA   30 --- --- V  
                   
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA   --- 0.028 --- V/℃  
                   
    VGS=10V , ID=30A   --- 3.2 4.0    
                   
RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V , ID=15A   --- 6.0 9  
VGS(th) Gate Threshold Voltage     1.2 --- 2.5 V  
                   
△VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =250uA   --- -6.16 --- mV/℃  
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃   --- --- 1    
               
VDS=24V , VGS=0V , TJ=55℃   --- --- 5 uA  
       
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V   --- --- ±100 nA  
                 
gfs Forward Transconductance VDS=5V , ID=30A   --- 43 --- S  
                 
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz   --- 1.7 --- Ω  
                 
Qg Total Gate Charge (4.5V)     --- 20 ---    
                 
Qgs Gate-Source Charge VDS=15V , VGS=4.5V , ID=15A   --- 7.6 --- nC  
                 
Qgd Gate-Drain Charge     --- 7.2 ---    
                 
Td(on) Turn-On Delay Time     --- 7.8 ---    
    VDD=15V , VGS=10V ,              
Tr Rise Time   --- 15 ---    
RG=3.3      
              ns  
Td(off) Turn-Off Delay Time   --- 37.3 ---  
ID=15A      
                 
Tf Fall Time   --- 10.6 ---    
       
                 
Ciss Input Capacitance     --- 2295 ---    
                 
Coss Output Capacitance VDS=15V , VGS=0V , f=1MHz   --- 267 --- pF  
               
                 
Crss Reverse Transfer Capacitance     --- 210 ---    
                 
IS Continuous Source Current1,5     --- --- 81 A  
    VG=VD=0V , Force Current              
ISM Pulsed Source Current2,5   --- --- 160 A  
     
                 
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃   --- --- 1 V  
                 
trr Reverse Recovery Time IF=30A , dI/dt=100A/µs , --- 14 --- nS  
               
Qrr Reverse Recovery Charge --- 5 --- nC  
TJ=25℃    
                 
                   
Note :                  
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.              
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%              
3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=48A              
4. The power dissipation is limited by 150℃ junction temperature              
5. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.      

 

Integrated Circuit N Channel Transistor Mosfet SMD Electronic Component AP70N03NF 3

Integrated Circuit N Channel Transistor Mosfet SMD Electronic Component AP70N03NF 4                               

 

Integrated Circuit N Channel Transistor Mosfet SMD Electronic Component AP70N03NF 5

For more information please refer to the attachment, or contact us:

Contact: Alana
Email:alana@doublelight.com.cn
Wechat:+86 13387077703
Skype(Whatsapp):+86 16607099289

Integrated Circuit N Channel Transistor Mosfet SMD Electronic Component AP70N03NF 6

Contact Details
Lisa

Phone Number : 18719066520

WhatsApp : +8618719066520