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AP85N03NF Power Field Effect Transistor MOSFET SMD N Channel With Load Switch

Basic Information
Place of Origin: Guangdong, China
Brand Name: CANYI
Certification: RoHS
Model Number: AP85N03NF
Minimum Order Quantity: 1000PCS
Price: Negotiated
Packaging Details: Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Delivery Time: 3-5 days
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Detail Information
Type: Plastic Transistor Package: SOP-8
TJ, Tstg: -55 To 175℃ Shipping By: DHL\UPS\Fedex\EMS\HK Post
Application: For VCD, DVD, Calculator, Etc. VDS: 30V
High Light:

mosfet power transistor

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high power transistor


Product Description

AP85N03NF Power field effect Transistor MOSFET SMD N-Channel with Load switch

 

 

Description

 

 

The AP85N03NF uses advanced trench technology to provide excellent R DS(ON) 

 

low gate charge and operation with gate voltages as low as 4.5V.

 

This device is suitable for use as a Battery protection or in other Switching application.

 

 

General Features

 

 

  V DS = 30V I D =85 A                             R DS(ON) < 4mΩ @ V GS =10V

 

 

Application

 


Battery protection


Load switch


Uninterruptible power supply

 

                                                                                       DFN5*6-8L

AP85N03NF Power Field Effect Transistor MOSFET SMD N Channel With Load Switch 0     AP85N03NF Power Field Effect Transistor MOSFET SMD N Channel With Load Switch 1

                                                                                                                                                          N-Channel MOSFET

Absolute Maximum Ratings (TC=25unless otherwise noted)

 

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V1,6 85 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V1,6 68 A
IDM Pulsed Drain Current2 216 A
EAS Single Pulse Avalanche Energy3 144.7 mJ
IAS Avalanche Current 53.8 A
PD@TC=25℃ Total Power Dissipation4 69 W
PD@TA=25℃ Total Power Dissipation4 5 W
TSTG Storage Temperature Range -55 to 175
TJ Operating Junction Temperature Range -55 to 175
RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W
RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) 25 ℃/W
RθJC Thermal Resistance Junction-Case1 1.8 ℃/W

 

Electrical Characteristics (TJ=25 , unless otherwise noted)

 

Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.0213 --- V/℃
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=30A --- 2.2 4
VGS=4.5V , ID=15A --- 4.8  
 
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.7 2.5 V
 
△VGS(th) VGS(th) Temperature Coefficient --- -5.73 --- mV/℃
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA
VDS=24V , VGS=0V , TJ=55℃ --- --- 5
 
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100  
nA
gfs Forward Transconductance VDS=5V , ID=30A --- 26.5 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.4 ---  
Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=15A --- 98 --- nC
Qgs Gate-Source Charge --- 11 ---
Qgd Gate-Drain Charge --- 21 ---
Td(on) Turn-On Delay Time VDD=15V , VGS=10V ,
RG=3.3
ID=15A
--- 17 --- ns
ns
Tr Rise Time --- 41 --- ns
ns
Td(off) Turn-Off Delay Time --- 55 ---
ns
ns
Tf Fall Time --- 66 --- ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 5471 --- pF
pF
Coss Output Capacitance --- 1628 --- pF
Crss Reverse Transfer Capacitance --- 1026 --- pF
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 130 A
A
ISM Pulsed Source Current2,5 --- --- 520 A
 
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V

AP85N03NF Power Field Effect Transistor MOSFET SMD N Channel With Load Switch 2AP85N03NF Power Field Effect Transistor MOSFET SMD N Channel With Load Switch 3

Note :

 

1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

 

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

 

3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =53.8A

 

4.The power dissipation is limited by 175℃ junction temperature

 

5.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.

 

6.Package limitation current is 85A.

                               

 

AP85N03NF Power Field Effect Transistor MOSFET SMD N Channel With Load Switch 4

AP85N03NF Power Field Effect Transistor MOSFET SMD N Channel With Load Switch 5

AP85N03NF Power Field Effect Transistor MOSFET SMD N Channel With Load Switch 6

For more information please refer to the attachment, or contact us:

 

Contact Details
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Phone Number : 86-15216951191

WhatsApp : +8615216951191