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Plastic Mosfet Power Transistor N Channel AP60N03DF For Battery Protection

Basic Information
Place of Origin: shenzhen, China
Brand Name: CANYI
Certification: RoHS
Model Number: AP60N03DF
Minimum Order Quantity: 1000PCS
Price: Negotiated
Packaging Details: Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Delivery Time: 3-7 days
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Detail Information
Type: Plastic Transistor Application: Battery Protection Or In Other Switching
Reverse Transfer Capacitance: 131pF Forward Transconductance: 9.8S
Avalanche Current: 34A Storage Temperature Range: -55 To 150 ℃
High Light:

mosfet power transistor

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high power transistor


Product Description

AP60N03DF N-Channel Advanced Power MOSFET power field effect transistor

AP60N03DF.pdf

 

 

Description


The AP60N03DF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

 

General Features

 

V DS = 30V I D =60 A
R DS(ON) < 8.5mΩ @ V GS =10V

 

Application

 

Battery protection
Load switch
Uninterruptible power supply

                                                                                       

     Plastic Mosfet Power Transistor N Channel AP60N03DF For Battery Protection 0Plastic Mosfet Power Transistor N Channel AP60N03DF For Battery Protection 1

                                                                                                                                                    

Absolute Maximum Ratings (TC=25unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current, V GS @ 10V 1 I D @T C =25 ℃ 60 A
Continuous Drain Current, V GS @ 10V 1 I D @T C =100 ℃ 29
Continuous Drain Current, V GS @ 10V 1 I D @T A =25℃ 11 A
Continuous Drain Current, V GS @ 10V 1 I D @T A =70℃ 9 A
Pulsed Drain Current 2 I DM 92 A
Single Pulse Avalanche Energy 3 EAS 57.8 mJ
Avalanche Current I AS 34 A
Total Power Dissipation 4 P D @T C =25℃ 29 W
Total Power Dissipation 4 P D @T A =25 ℃ 1.67 W
Storage Temperature Range T STG -55 to 150
Operating Junction Temperature Range T J -55 to 150
Thermal Resistance Junction-ambient
1
R θJA 75 ℃ /W
Thermal Resistance Junction-Case 1 R θJC 4.32 ℃ /W

 

Electrical Characteristics (TJ=25 , unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit
Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 30 - - V
BVDSS Temperature Coefficient △BV DSS /△T J Reference to 25℃ ,I D =1mA - 0.027 - V/℃
Static Drain-Source On-Resistance 2 R DS(ON) V GS =10V , I D =12A - 7 8.5
V GS =4.5V , I D =10A   10 1.3
Gate Threshold Voltage VGS(th) V GS =V DS , I D =250uA 1.0 - 2.5 V
V GS(th) Temperature Coefficient △V GS(th - -5.8 - mV/℃
Drain-Source Leakage Current I DSS

V DS =24V , V GS =0V ,

T J =25℃

- - 1 uA

V DS =24V , V GS =0V ,

T J =55℃

- - 5
Gate-Source Leakage Current I GSS V GS =±20V , V DS =0V - - ± 100 nA
Forward Transconductance gFS V DS =5V , I D =15A - 9.8 - S
Gate Resistance R g V DS =0V , V GS =0V ,f=1MHz - 1.7 -  
Total Gate Charge (4.5V) Q g

V DS =20V , V GS =4.5V ,

I D =12A

- 12.8 - nC
Gate-Source Charge Q gs - 3.3 -
Gate-Drain Charge Q gd - 6.5 -
Turn-on Delay Time td(on)

V DD =12V , V GS =10V ,

R G =3.3

I D =5A

- 4.5 - nS
Rise Time t r - 10.8 -
Turn-Off Delay Time td(off) - 25.5 -
Fall Time t f - 9.6 -
Input Capacitance C iss V DS =15V , V GS =0V ,f=1MHz - 1317 - pF
Output Capacitance C oss - 163 -
Reverse Transfer Capacitance C rss - 131 -
Continuous Source Current 1,6 I S V G =V D =0V , Force Current - - 46 A
Pulsed Source Current 2,6 I SM - - 92 A
Diode Forward Voltage 2 VSD V GS =0V , I S =1A ,T J =25℃ - - 1 V

Diode Characteristics
Note :
1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3 .The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =34A
4.The power dissipation is limited by 150℃ junction temperature
5 .The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.

                               

 

 

Plastic Mosfet Power Transistor N Channel AP60N03DF For Battery Protection 2

 

Contact Details
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Phone Number : 86-13423609933

WhatsApp : +8613423609933