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NCE N Channel Enhancement Mode Power MOSFET NCE30H10K TO-252 package

Basic Information
Place of Origin: Guangdong, China
Brand Name: NCE
Certification: RoHS
Model Number: NCE30H10K
Minimum Order Quantity: 2500PCS
Price: usd 0.2/pcs
Packaging Details: Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Delivery Time: 3-5 days
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Detail Information
Type: NCE N Channel MOSFET Package Type: Surface Mount
Package: TO-252 VDS: 30V
Drain Current-Continuous: 100A Maximum Power Dissipation: 110W
High Light:

NCE N Channel MOSFET

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NCE30H10K Surface Mount MOSFET

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TO-252 Surface Mount MOSFET


Product Description

AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor
 
  N channel transistor features

  1. VDS =30V,ID =100A
  2. RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ)
  3. High density cell design for ultra low Rdson
  4. Fully characterized avalanche voltage and current
  5. Good stability and uniformity with high EAS
  6. Excellent package for good heat dissipation
  7. Special process technology for high ESD capability
Mosfet power transistor description
  1. The NCE30H10K uses advanced trench technology and
  2. design to provide excellent RDS(ON) with low gate charge. It
  3. can be used in a wide variety of applications.
NCE30H10K TO-252 application
  1. Power switching application
  2. Hard switched and high frequency circuits
  3. Uninterruptible power supply
 
NCE N Channel Enhancement Mode Power MOSFET NCE30H10K TO-252 package 0
 

 


Maximum Ratings and Thermal Characteristics (TA = 25unless otherwise noted)
ParameterSymbolLimitUnit
Drain-Source VoltageVDS800V
Gate-Source VoltageVGS±30
Continuous Drain CurrentID100A

 
Pulsed Drain Current

IDM400

Maximum Power Dissipation
 

PD
 

110W

Single pulse avalanche energy (
 

EAS
 

350mJ

Operating Junction and Storage Temperature Range
 

TJ,TSTG
 

-55 To 175
 


 

Electrical Characteristics (TA=25°C, unless otherwise noted)

 
 

ParameterSymbolTest ConditionMin.Typ.Max.Unit
Off Characteristics
Drain-Source Breakdown VoltageV(BR) DSSVGS = 0V, ID = -250uA30--V
Zero Gate Voltage Drain CurrentIDSSVDS = 24V, VGS = -0V--1uA
Gate Body LeakageIGSSVGS=±12v,VDS= 0V--±100nA
On characteristics
Gate Threshold VoltageVGS(th)VDS = VGS ,ID = 250uA11.63v
Drain-Source On-State Resistance

RDS(ON)
 

VGS=10V, ID=20A
 

-4.05.5mΩ
Forward TransconductancegfsVDS= 10V,ID= 20A50--S
Switching Characteristics
Turn-On Delay Timetd(on)

VDD = 15V, ID=60A
VGS=4.5V,RGEN=1.8Ω

-11-ns
Turn-On Rise Timetr-160-
Turn-Off Delay Timetd(off)-25-
Turn-Off Fall Timetf-60-

Total Gate Charge
 

Qg

VDS=15V,ID=30A,
VGS=10V

 70 nC

Gate-Source Charge
 

Qgs  8.8 

Gate-Drain Charge
 

Qgd  16.3 
Dynamic Characteristics
Input CapacitanceCiss

 
VDS = 25V, VGS = 0V
f = 1 .0MHz
 

 3400 pF
Output CapacitanceCoss 356 
Reverse Transfer CapacitanceCrss 308 
Drain-source diode characteristics
Diode Forward VoltageVSDISD=20A,VGS=0V--1.2V
Diode Forward Current

IS
 

---100A
Reverse Recovery Timetrr

Tj=25℃,Isd=60A,
di/dt=100A/μs

-56-ns
Reverse Recovery ChargeQrr-110-nC

 

Contact Details
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Phone Number : 86-13423609933

WhatsApp : +8613423609933