High Precision 3N80 3A 800V Field Effect Transistor / Power Mosfet N - Channel TO-220

Basic Information
Place of Origin: Guangdong, China
Brand Name: CANYI
Certification: RoHS
Model Number: 3N80
Minimum Order Quantity: Negotiable
Price: Negotiated
Packaging Details: Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Delivery Time: 3-5 days
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000PCS Per Day
Detail Information
Type: N-Channel Power MOSFET Package: TO-220
Drain-Source Voltage: 800v Continuous Drain Current: 3A
Package Type: Throught Hole Samples: Free
High Light:

high power transistor


p channel transistor

Product Description

High precision 3N80 3A 800V Field Effect Transistor/ Power Mosfet N-Channel TO-220


20~40V 40V 55-60V 65-95V 100-150V 200-500V 600V 650V 700-900V MOSFET

High power transistor features:

  • Excellent package for good heat dissipation
  • Ultra low gate charge
  • Low reverse transfer capacitance
  • Fast switching capability
  • Avalanche energy specified


General description of insulated gate bipolar transistor

The 3N80 provide excellent RDS(ON)low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.It used in power switching application.



High Precision 3N80 3A 800V Field Effect Transistor / Power Mosfet N - Channel TO-220 0High Precision 3N80 3A 800V Field Effect Transistor / Power Mosfet N - Channel TO-220 1


Maximum ratings (Ta=25℃ unless otherwise noted)


Parameter Symbol Limit Unit
Drain-Source Voltage VDS 800 V
Gate-Source Voltage VGS ±30
Continuous Drain Current ID 3 A


Pulsed Drain Current

IDM 10
Single Pulsed Avalanche Energy (note1)






Thermal Resistance from Junction to Ambient






Junction Temperature TJ 150


Storage Temperature Range TSTG -55~+150

Maximum lead temperature for soldering purposes ,

1/8”from case for 5 seconds





Electrical characteristics (Ta=25℃ unless otherwise noted)


Parameter Symbol Test Condition Unit
Off Characteristics
Drain-Source Breakdown Voltage V(BR) DSS VGS = 0V, ID = -250uA V
Zero Gate Voltage Drain Current IDSS VDS = 800V, VGS = 0V uA
Gate Body Leakage IGSS VGS=±30v,VDS= 0V nA
On characteristics (note 2)
Drain-Source On-State Resistance RDS(on) VGS = 10V, ID = 1.5A mΩ
Forward Transconductance 1) gfs VDS=1 5V,ID= 1.5A S
Gate Threshold Voltage VGS(th) VDS = VGS ,ID = 250uA v
Switching Characteristics (note 2,3)
Turn-On Delay Time td(on)

VDD = 400V, VDS=10V

RG=4.7Ω,RG = 3A

Turn-On Rise Time tr
Turn-Off Delay Time td(off)
Turn-Off Fall Time tf
Total Gate Charge Qg

VDS =640V,VGS =10V,ID =3A


Gate-Source Charge Qgs nC
Gate-Drain Charge Qgd nC
Dynamic Characteristics (note 3)
Input Capacitance Ciss


VDS = 25V, VGS = 0V

f = 1 MHz


Output Capacitance Coss
Reverse Transfer Capacitance Crss
Drain-source diode characteristics and maximum ratings
Drain-source diode forward voltage VSD VGS = 0V, IS =3A V

Continuous drain-source diode forward






Pulsed drain-source diode forward current






Notes :
1. IL=3A, VDD=50V, RG=25Ω,Starting TJ=25℃.
2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3. Guaranteed by design, not subject to production </


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  • Supplying to Changdian, Xinghai, Tuofeng, Leshan, Roma and Anshi
  • Competitive price and save your time
  • Over 10 years work experience technical service team
  • Mix order accepted and free sample

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