OSH10N80,FQAF10N80,Field effect tube,MOSFET
FQAF10N80
10A 800V TO-3P FQAF10N80,Field effect tube,MOSFET,Contact us to provide more detailed product information.MOS tube manufacturers and sellers from China provide quality products and services, and look forward to your cooperation.
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10A 800V TO-3P FQAF10N80,Field effect tube,MOSFET,Contact us to provide more detailed product information.MOS tube manufacturers and sellers from China provide quality products and services, and look forward to your cooperation.
Transistor-FET, MOSFET package pipe fitting Type of FET N channel technology MOSFET (metal oxide) Drain-source voltage (Vdss) 800 V Current at 25°C-continuous drain (Id) 6.7A（Tc） Driving voltage (maximum Rds On, minimum Rds On) 10V On-resistance with different Id and Vgs (maximum) 1.05 ohm @ 3.35A, 10V Vgs(th) when Id is different (maximum) 5V @ 250µA Gate charge (Qg) at different Vgs (maximum) 71 nC @ 10 V Vgs (maximum) ±30V Input capacitance (Ciss) at different Vds (maximum) 2700 pF @ 25 V FET function - Power dissipation (maximum) 113W（Tc） Working temperature -55°C ~ 150°C（TJ） Installation type through-hole Device packaging TO-3PF
Transistor-FET, MOSFET package pipe fitting Type of FET N channel technology MOSFET (metal oxide) Drain-source voltage (Vdss) 800 V Current at 25°C-continuous drain (Id) 6.7A（Tc） Driving voltage (maximum Rds On, minimum Rds On) 10V On-resistance with different Id and Vgs (maximum) 1.05 ohm @ 3.35A, 10V Vgs(th) when Id is different (maximum) 5V @ 250µA Gate charge (Qg) at different Vgs (maximum) 71 nC @ 10 V Vgs (maximum) ±30V Input capacitance (Ciss) at different Vds (maximum) 2700 pF @ 25 V FET function - Power dissipation (maximum) 113W（Tc） Working temperature -55°C ~ 150°C（TJ） Installation type through-hole Device packaging TO-3PF