OSPF22N65C,IXFP22N65X2M,Single FET, MOSFET,22N65
IXFP22N65X2M
22A 650V TO-220F OSPF22N65C,IXFP22N65X2M,Single FET, MOSFET,22N65,MOS tube manufacturers and sellers from China provide quality products and services, and look forward to your cooperation.Contact us to provide more detailed product information.
Quantity
22A 650V TO-220F OSPF22N65C,IXFP22N65X2M,Single FET, MOSFET,22N65,MOS tube manufacturers and sellers from China provide quality products and services, and look forward to your cooperation.Contact us to provide more detailed product information.
Single FET, MOSFET package pipe fitting Type of FET N channel technology MOSFET (metal oxide) Drain-source voltage (Vdss) 650 V Current at 25°C-continuous drain (Id) 22A（Tc） Driving voltage (maximum Rds On, minimum Rds On) 10V On-resistance with different Id and Vgs (maximum) 15 mω @ 11A, 10V Vgs(th) when Id is different (maximum) 5V @ 1.5mA Gate charge (Qg) at different Vgs (maximum) 37 nC @ 10 V Vgs (maximum) ±30V Input capacitance (Ciss) at different Vds (maximum) 2190 pF @ 25 V FET function - Power dissipation (maximum) 37W（Tc） Working temperature -55°C ~ 150°C（TJ） Installation type through-hole Supplier device package TO-220 isolated label Package/housing TO-220-3 full package, isolation tab
Single FET, MOSFET package pipe fitting Type of FET N channel technology MOSFET (metal oxide) Drain-source voltage (Vdss) 650 V Current at 25°C-continuous drain (Id) 22A（Tc） Driving voltage (maximum Rds On, minimum Rds On) 10V On-resistance with different Id and Vgs (maximum) 15 mω @ 11A, 10V Vgs(th) when Id is different (maximum) 5V @ 1.5mA Gate charge (Qg) at different Vgs (maximum) 37 nC @ 10 V Vgs (maximum) ±30V Input capacitance (Ciss) at different Vds (maximum) 2190 pF @ 25 V FET function - Power dissipation (maximum) 37W（Tc） Working temperature -55°C ~ 150°C（TJ） Installation type through-hole Supplier device package TO-220 isolated label Package/housing TO-220-3 full package, isolation tab