OSPF740,IRF740PBF,Single FET, MOSFET,Field-Effect Tube
IRF740PBF
OSPF740,IRF740PBF,Single FET, MOSFET,Field-Effect Tube,MOS tube manufacturers and sellers from China provide quality products and services, and look forward to your cooperation.Contact us to provide more detailed product information.
Quantity
OSPF740,IRF740PBF,Single FET, MOSFET,Field-Effect Tube,MOS tube manufacturers and sellers from China provide quality products and services, and look forward to your cooperation.Contact us to provide more detailed product information.
Single FET, MOSFET package pipe fitting Type of FET N channel technology MOSFET (metal oxide) Drain-source voltage (Vdss) 400 V Current at 25°C-continuous drain (Id) 10A（Tc） Driving voltage (maximum Rds On, minimum Rds On) 10V On-resistance with different Id and Vgs (maximum) 50 mω @ 6A, 10V Vgs(th) when Id is different (maximum) 4V @ 250µA Gate charge (Qg) at different Vgs (maximum) 63 nC @ 10 V Vgs (maximum) ±20V Input capacitance (Ciss) at different Vds (maximum) 1400 pF @ 25 V FET function - Power dissipation (maximum) 125W（Tc） Working temperature -55°C ~ 150°C（TJ） Installation type through-hole Supplier device package TO-220F
Single FET, MOSFET package pipe fitting Type of FET N channel technology MOSFET (metal oxide) Drain-source voltage (Vdss) 400 V Current at 25°C-continuous drain (Id) 10A（Tc） Driving voltage (maximum Rds On, minimum Rds On) 10V On-resistance with different Id and Vgs (maximum) 50 mω @ 6A, 10V Vgs(th) when Id is different (maximum) 4V @ 250µA Gate charge (Qg) at different Vgs (maximum) 63 nC @ 10 V Vgs (maximum) ±20V Input capacitance (Ciss) at different Vds (maximum) 1400 pF @ 25 V FET function - Power dissipation (maximum) 125W（Tc） Working temperature -55°C ~ 150°C（TJ） Installation type through-hole Supplier device package TO-220F