STW15NK90Z，Discrete semiconductor products Transistor-FET, MOSFET-single manufacturer STMicroelectronics series SuperMESH™ package pipe fitting Type of FET N channel technology MOSFET (metal oxide) Drain-source voltage (Vdss) 900 V Current at 25°C-continuous drain (Id) 15A（Tc） Driving voltage (maximum Rds On, minimum Rds On) 10V On-resistance with different Id and Vgs (maximum) 50 mω 7.5A, 10V Vgs(th) when Id is different (maximum) 4.5V 150µA Gate charge (Qg) at different Vgs (maximum) 256 nC 10 V Vgs (maximum) ±30V Input capacitance (Ciss) at different Vds (maximum) 6100 pF 25 V FET function - Power dissipation (maximum) 350W（Tc） Working temperature -55°C ~ 150°C（TJ） Installation type through-hole Supplier device package TO-247-3 Package/housing TO-247-3